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SI5903DC_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET
Si5903DC
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.155 @ VGS = --4.5 V
--20
0.180 @ VGS = --3.6 V
0.260 @ VGS = --2.5 V
ID (A)
2.9
2.7
2.2
1206-8 ChipFETt
1
S1
D1
G1
D1
S2
D2
G2
D2
Bottom View
Ordering Information: Si5903DC-T1
S1
S2
G1
G2
Marking Code
DA XX
Lot Traceability
and Date Code
Part # Code
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
--20
12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
2.9
2.1
2.1
--1.8
10
1.5
--0.9
2.1
1.1
1.1
0.6
--55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
50
Steady State
RthJA
90
Steady State
RthJF
30
60
110
_C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71054
S-21251—Rev. B, 05-Aug-02
www.vishay.com
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