SI5445BDC Datasheet, PDF (1/1 Pages) Vishay Siliconix – P-Channel, 1.8-V (G-S) MOSFET

Specification Comparison
Vishay Siliconix
Si5445BDC vs. Si5445DC
Description:
Package:
Pin Out:
P-Channel, 1.8-V (G-S) MOSFET
1206-8 ChipFET®
Identical
Part Number Replacements:
Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3
Si5445BDC-T1-E3 Replaces Si5445DC-T1
Summary of Performance:
The Si5445BDC is the replacement to the original Si5445DC; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T_A = 25^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si5445BDC Si5445DC Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-8
VGS
+8
-8
+8
V
Continuous Drain Current
TA = 25°C
TA = 70°C
ID
-7.1
-7.1
-5.2
-5.2
Pulsed Drain Current
IDM
-20
-20
A
Continuous Source Current
(MOSFET Diode Conduction)
IS
-2.1
-2.1
Power Dissipation
TA = 25°C
TA = 70°C
PD
2.5
1.3
2.5
1.3
W
Operating Junction & Storage Temperature Range
Tj & Tstg
-55 to 150
-55 to 150
°C
Maximum Junction-to-Ambient
RthJA
50
50
°C/W
SPECIFICATIONS (T_J = 25^OC UNLESS OTHERWISE NOTED)
Si5445BDC
Parameter
Symbol
Min
Typ
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
VGS = -4.5 V
VGS(th)
IGSS
IDSS
ID(on)
-0.45
-20
VGS= -4.5 V
0.027
Drain-Source On-Resistance
VGS = -2.5 V
VGS = -1.8 V
rDS(on)
0.035
0.050
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
gfs
18
VSD
-0.8
Qg
14
Qgs
1.8
Qgd
3.3
Rg
8
Switching
Turn-On Time
Turn-Off Time
Source-Drain Reverse Recovery Time
td(on)
12
tr
22
td(off)
75
tf
50
trr
75
Max
-1.0
+100
-1
0.033
0.043
0.060
-1.2
21
20
35
115
75
115
Si5445DC
Min Typ Max Unit
-0.45
-20
NS
V
+100
nA
-1
µA
A
0.030
0.035
0.040
0.047
Ω
0.052
0.062
18
S
-0.8
-1.2
V
17
26
2.8
nC
2.6
NS
Ω
15
25
45
70
110
165
ns
65
100
30
60
Document Number 74051
14-Apr-05
www.vishay.com