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SI5404BDC_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) MOSFET
New Product
N-Channel 2.5-V (G-S) MOSFET
Si5404BDC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.028 @ VGS = 4.5 V
0.039 @ VGS = 2.5 V
ID (A)
7.5
6.3
Qg (Typ)
6.3
FEATURES
D TrenchFETr Power MOSFET
1206-8 ChipFETr
1
D
D
D
D
D
D
G
S
Bottom View
Ordering Information: Si5404BDC-T1—E3
D
Marking Code
AE XXX
Lot Traceability
and Date Code
Part # Code
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"12
7.5
5.4
5.4
3.9
20
2.1
1.1
2.5
1.3
1.3
0.7
−55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
45
Steady State
RthJA
80
Steady State
RthJF
18
50
95
_C/W
22
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73102
S-41826—Rev. A, 11-Oct-04
www.vishay.com
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