SI5404BDC Datasheet, PDF (1/1 Pages) Vishay Siliconix – Specification Comparison

Specification Comparison
Vishay Siliconix
Si5404BDC vs. Si5404DC
Description: N-Channel, 2.5-V (G-S) MOSFET
Package: 1206-8 ChipFETr
Pin Out:
Identical
Part Number Replacements:
Si5404BDC-T1 Replaces Si5404DC-T1
Si5404BDC-T1—E3 (Lead (Pb)-Free version) Replaces Si5404DC-T1—E3
Summary of Performance:
The Si5404BDC is the replacement for the original Si5404DC; both parts perform identically including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T_A = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si5404BDC Si5404DC
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (MOSFET Diode Conduction)
Power Dissipation
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_j and T_stg
R_thJA
20
"12
7.5
5.4
20
2.1
2.5
1.3
−55 to 150
50
20
"12
7.2
5.2
20
2.1
2.5
1.3
−55 to 150
50
V
A
W
_C
_C/W
SPECIFICATIONS (T_J = 25 _C UNLESS OTHERWISE NOTED)
Si5404BDC
Parameter
Symbol
Min
Typ
Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
V_GS = 4.5 V
V_GS = 4.5 V
V_GS = 2.5 V
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
0.6
1.5
"100
1
20
0.022
0.028
0.031
0.039
26
0.7
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Q_g
7
11
Q_gs
1.7
Q_gd
2
R_g
1.7
Turn-On Time
Turn-Off Time
Source-Drain Reverse Recovery Time
t_d(on)
t_r
t_d(off)
t_f
t_rr
12
20
12
20
25
40
10
20
20
40
*NS denotes parameter not specified in original data sheet.
Document Number: 73275
05-Jan-05
Si5404DC
Min Typ Max _Unit
0.6
V
"100
nA
1
mA
20
A
0.016
0.019
0.038
0.045
W
20
S
0.8
1.2
V
12
18
2.4
nC
3.2
NS*
W
20
30
40
60
40
60
ns
15
23
30
60
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