SI5402BDC Datasheet, PDF (1/1 Pages) Vishay Siliconix – Specification Comparison Si5402BDC vs. Si5402DC

Specification Comparison
Vishay Siliconix
Si5402BDC vs. Si5402DC
Description:
Package:
Pin Out:
N-Channel, 30-V (D-S) MOSFET
1206-8 ChipFET®
Identical
Part Number Replacements:
Si5402BDC-T1-E3 Replaces Si5402DC-T1-E3
Si5402BDC-T1-E3 Replaces Si5402DC-T1
Summary of Performance:
The Si5402BDC is the replacement to the original Si5402DC; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T_A = 25^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si5402BDC Si5402DC Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
+20
30
+20
V
Continuous Drain Current
TA = 25°C
TA = 70°C
ID
6.7
6.7
4.8
4.8
Pulsed Drain Current
IDM
20
20
A
Continuous Source Current
(MOSFET Diode Conduction)
IS
2.1
2.1
Power Dissipation
TA = 25°C
TA = 70°C
PD
2.5
1.3
2.5
1.3
W
Operating Junction & Storage Temperature Range
Tj & Tstg
-55 to 150
-55 to 150
°C
Maximum Junction-to-Ambient
RthJA
50
50
°C/W
SPECIFICATIONS (T_J = 25^OC UNLESS OTHERWISE NOTED)
Si5402BDC
Parameter
Symbol
Min
Typ
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
VGS = 10 V
VGS(th)
1.0
IGSS
IDSS
ID(on)
20
Drain-Source On-Resistance
VGS= 10 V
VGS = 4.5 V
rDS(on)
0.029
0.035
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
gfs
19
VSD
0.8
Qg
10
Qgs
1.9
Qgd
1.6
Rg
14
Switching
Turn-On Time
Turn-Off Time
Source-Drain Reverse Recovery Time
td(on)
10
tr
10
td(off)
27
tf
10
trr
20
Max
3.0
+100
-1
0.035
0.042
1.2
20
15
15
40
15
60
Si5402DC
Min Typ Max Unit
1.0
NS
V
+100
nA
-1
µA
20
A
0.030
0.035
0.045
0.055
Ω
15
S
0.8
1.2
V
13
20
1.3
nC
3.1
NS
Ω
10
15
10
15
25
40
ns
10
15
30
60
Document Number 74062
10-May-05
www.vishay.com