SI4963BDY_07 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET

New Product
Si4963BDY
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.032 @ V_GS = −4.5 V
−20
0.050 @ V_GS = −2.5 V
I_D (A)
−6.5
−5.2
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4963BDY—E3 (Lead Free)
Si4963BDY-T1—E3 (Lead Free with Tape and Reel)
S₁
G₁
D₁
P-Channel MOSFET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−20
"12
−6.5
−4.9
−5.2
−3.9
−40
−1.7
−0.9
2.0
1.1
1.3
0.7
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
R_thJA
R_thJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72753
S-40235—Rev. A, 16-Feb-04
Typical
58
91
34
Maximum
62.5
110
40
Unit
_C/W
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