SI4947DY-T1 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

Dual P-Channel 30-V (D-S) MOSFET
Si4947ADY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 30
0.080 at V_GS = - 10 V
0.135 at V_GS = - 4.5 V
I_D (A)
- 3.9
- 3.0
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
SO-8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4947ADY-T1-E3 (Lead (Pb)-free)
Si4947ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
G₁
D₁
P-Channel MOSFET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
- 3.9
- 3.1
- 3.0
- 2.4
A
I_DM
- 20
Continuous Source Current (Diode Conduction)^a
I_S
- 1.7
- 1.0
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2.0
1.2
1.3
0.76
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
54
87
34
Maximum
62.5
105
45
Unit
°C/W
Document Number: 71101
S09-0870-Rev. D, 18-May-09
www.vishay.com
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