SI4925BDY Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

Si4925BDY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.025 @ V_GS = −10 V
−30
0.041 @ V_GS = −4.5 V
I_D (A)
−7.1
−5.5
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density
Process
APPLICATIONS
D Load Switches
− Notebook PCs
− Desktop PCs
− Game Stations
Pb-free
Available
SO-8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4925BDY
Si4925BDY—T1 (with Tape and Reel)
Si4925BDY—E3 (Lead (Pb)-Free)
Si4925BDY-T1—E3 (Lead (Pb)-Free) with Tape and Reel)
S₁
S₂
G₁
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−30
"20
−7.1
−5.3
−5.7
−4.3
−40
−1.7
−0.9
2.0
1.1
1.3
0.7
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 72001
S-50366—Rev. C, 28-Feb-05
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
50
85
30
Maximum
62.5
110
40
Unit
_C/W
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