SI4923DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

New Product
Si4923DY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.021 @ V_GS = -10 V
-30
0.031 @ V_GS = -4.5 V
I_D (A)
-8.3
- 6.8
SO-8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
APPLICATIONS
D Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
D Battery Switch
S₁
S₂
G₁
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
-30
"20
- 8.3
-6.2
-6.6
-5.0
-30
-1.7
-0.9
2.0
1.1
1.3
0.7
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 72069
S-22120—Rev. A, 25-Nov-02
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
45
85
26
Maximum
62.5
110
35
Unit
_C/W
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