SI4894BDY Datasheet, PDF (1/1 Pages) Vishay Siliconix – N-Channel, 30-V (D-S) MOSFET

Specification Comparison
Vishay Siliconix
Si4894BDY vs. Si4894DY
Description: N-Channel, 30-V (D-S) MOSFET
Package: SOIC-8
Pin Out:
Identical
Part Number Replacements:
Si4894BDY-T1 Replaces Si4894DY-T1
Si4894BDY-T1—E3 (Lead (Pb)-Free version) Replaces Si4894DY-T1—E3
Summary of Performance:
The Si4894BDY is the replacement for the original Si4894DY; both parts perform identically including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T_A = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4894BDY
Si4894DY
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (MOSFET Diode Conduction)
Power Dissipation
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_j and T_stg
R_thJA
30
"20
12
9.5
40
2.3
2.5
1.6
−55 to 150
50
30
"20
12.5
10
20
2.7
3.0
1.9
−55 to 150
42
V
A
W
_C
_C/W
SPECIFICATIONS (T_J = 25 _C UNLESS OTHERWISE NOTED)
Si4894BDY
Static
Parameter
Symbol
Min
Typ
Max
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
V_GS = 10 V
V_GS = 10 V
V_GS = 4.5 V
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
1.0
3.0
"100
1
30
0.009
0.011
0.013
0.018
32
0.76
1.1
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
V_GS = 10 V
V_GS = 5 V
Q_g
Q_gs
Q_gd
R_g
25.4
38
13.2
20
5.3
4.3
0.9
1.8
2.7
Turn-On Time
Turn-Off Time
Source-Drain Reverse Recovery Time
t_d(on)
t_r
t_d(off)
t_f
t_rr
13
20
10
15
33
50
10
15
25
40
NS denotes parameter not specified in original data sheet.
Si4894DY
Min Typ Max _Unit
0.8
V
"100
nA
1
mA
30
A
0.010
0.012
0.015
0.018
W
30
S
0.7
1.1
V
20
30
11.5
17
nC
3.0
4.5
1
2.4
W
10
20
5
10
30
60
ns
10
20
30
60
Document Number: 73277
06-Jan-05
www.vishay.com
1