SI4866BDY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

N-Channel 12-V (D-S) MOSFET
Si4866BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0053 at V_GS = 4.5 V
12
0.006 at V_GS = 2.5 V
0.0074 at V_GS = 1.8 V
I_D (A)^a
21.5
20.2
18.2
Q_g (Typ.)
29.5 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• Synchronous Rectifier
• Point-of-Load Synchronous Buck Converter
D
G
Top View
Ordering Information: Si4866BDY-T1-E3 (Lead (Pb)-free)
Si4866BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
Limit
12
±8
21.5
17.2
16.1^b,c
12.9^b,c
50
4.0
2.3^b,c
20
20
4.45
2.85
2.50^b,c
1.6^b,c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b,d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJF
Typical
40
23
Maximum
50
28
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
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