SI4840DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET
Si4840DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.009 @ V_GS = 10 V
40
0.012 @ V_GS = 4.5 V
I_D (A)
14
12
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4840DY
Si4840DY-T1 (with Tape and Reel)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
40
"20
14
10
11
8
50
2.8
1.4
3.1
1.56
2.0
1.0
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71188
S-03950—Rev. B, 16-May-03
Symbol
R_thJA
R_thJF
Typical
33
65
17
Maximum
40
80
21
Unit
_C/W
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