SI4835DDY-T1-E3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
P-Channel 30-V (D-S) MOSFET
Si4835DDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 30
0.018 at V_GS = - 10 V
0.030 at V_GS = - 4.5 V
I_D (A)^d
- 13
- 10
Q_g (Typ.)
22 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
APPLICATIONS
• Load Switches
- Notebook PCs
- Desktop PCs
S
G
Top View
Ordering Information: Si4835DDY-T1-E3 (Lead (Pb)-free)
Si4835DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
V_GS
- 30
V
± 25
T_C = 25 °C
- 13
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
- 10.5
- 8.7^{a, b}
- 7.7^{a, b}
A
- 50
- 4.6
2.0^{a, b}
- 20
20
mJ
T_C = 25 °C
5.6
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.6
2.5^{a, b}
W
T_A = 70 °C
1.6^{a, b}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on T_C = 25 °C.
t ≤ 10 s
Steady State
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
Symbol
R_thJA
R_thJF
Typical
39
18
Maximum
50
22
Unit
°C/W
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