SI4833DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4833DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
–30
r_DS(on) (W)
0.085 @ V_GS = –10 V
0.180 @ V_GS = –4.5 V
I_D (A)
"3.5
"2.5
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
V_F (V)
Diode Forward Voltage
I_F (A)
30
0.5 V @ 1.0 A
1.4
SO-8
S
K
A1
8K
A2
7K
G
S3
6D
G4
5D
Top View
D
A
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
V_DS
–30
V_KA
30
V_GS
"20
Continuous Drain Current (T_J = 150_C) (MOSFET)^{a, b}
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)^{a, b}
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)^{a, b}
Maximum Power Dissipation (Schottky)^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
"3.5
"2.8
"20
– 1.7
1.4
30
2
1.3
1.9
1.2
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t v 10 sec)^a
Maximum Junction-to-Ambient (t = steady state)^a
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 70796
S-56941—Rev. B, 02-Nov-98
Device
MOSFET
Schottky
MOSFET
Schottky
Symbol
R_thJA
Typical
90
92
Maximum
62.5
65
Unit
_C/W
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