SI4831DY-T1-E3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4831DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
–30
r_DS(on) (W)
0.045 @ V_GS = –10 V
0.090 @ V_GS = –4.5 V
I_D (A)
"5
"3.5
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
30
V_f (V)
Diode Forward Voltage
0.53 V @ 3 A
I_F (A)
3
A1
A2
S3
G4
SO-8
Top View
8K
7K
6D
5D
S
K
G
D
A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
V_DS
V_KA
V_GS
–30
30
"20
Continuous Drain Current (T_J = 150_C) (MOSFET)^{a, b}
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)^{a, b}
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)^{a, b}
Maximum Power Dissipation (Schottky)^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
"5
"3.9
"20
–1.7
3
20
2
1.28
1.83
1.17
–55 to 150
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Unit
V
A
W
_C
Document Number: 71061
S-61859—Rev. A, 10-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-1