SI4830CDY Datasheet, PDF (1/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4830CDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Channel-1 30
0.020 at V_GS = 10 V
0.025 at V_GS = 4.5 V
Channel-2 30
0.020 at V_GS = 10 V
0.025 at V_GS = 4.5 V
I_D (A)^{a, e Q}g ^(Typ.)
8.0
7.3
8.0
8.0
7.3
8.0
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
30
V_SD (V)
Diode Forward Voltage
0.51 V at 1.0 A
I_F (A)^a
2.0
S₁/D_{2 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^S1^/D2
5 ^S1^/D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT^® Plus Schottky
• PWM Optimized
• 100 % R_g Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook Logic dc-to-dc
• Low Current dc-to-dc
D₁
D₂
Schottky Diode
G₁
G₂
Top View
Ordering Information: Si4830CDY-T1-E3 (Lead (Pb)-free)
Si4830CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
30
V
V_GS
± 20
± 20
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
8.0^e
7.1
7.5^{b, c}
8.0^e
7.1
7.5^{b, c}
Pulsed Drain Current (10 µs Pulse Width)
T_A = 70 °C
5.8^{b, c}
5.8^{b, c}
I_DM
30
30
A
Source-Drain Current Diode Current
Pulsed Source-Drain Current
T_C = 25 °C
T_A = 25 °C
I_S
I_SM
2.6
1.8^{b, c}
30
2.6
1.8^{b, c}
30
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
10
E_AS
5
T_C = 25 °C
2.9
10
5
mJ
2.9
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.8
2^{b, c}
1.8
W
2^{b, c}
T_A = 70 °C
1.2^{b, c}
1.2^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Symbol
Typ. Max.
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
R_thJA
52
62.5
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
35
43
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).
e. Package limited.
Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
Channel-2
Typ. Max.
52
62.5
35
43
Unit
°C/W
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