SI4808DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4808DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.022 @ V_GS = 10 V
0.030 @ V_GS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
V_SD (V)
Diode Forward Voltage
30
0.50 V @ 1.0 A
I_D (A)
7.5
6.5
I_F (A)
2.0
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4808DY
Si4808DY-T1 (with Tape and Reel)
D₁ D₁
D₂ D₂
Schottky Diode
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
7.5
5.7
6.0
4.6
30
1.7
0.9
2.0
1.1
1.3
0.7
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71157
S-03951—Rev. B, 26-May-03
t v 10 sec
Steady-State
Steady-State
Symbol
R_thJA
R_thJC
MOSFET
Typ
Max
52
62.5
93
110
35
40
Schottky
Typ
Max
53
62.5
93
110
35
40
Unit
_C/W
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