SI4714DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET with Schottky Diode

New Product
Si4714DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.0135 at V_GS = 10 V
30
0.0175 at V_GS = 4.5 V
I_D (A)^a
13.6
12.0
Q_g (Typ.)
7.3 nC
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• SkyFET^ Monolithic TrenchFET^ Gen. 
Power MOSFET and Schottky Diode
• 100 % R_g Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC
- System Power, Memory
• Buck Converter
• Synchronous Rectifier Switch
D
Top View
Ordering Information:
Si4714DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (t = 300 µs)
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t  10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typ.
38
22
Limit
30
± 20
13.6
10.7
10.1^{b, c}
8.1^{b, c}
50
3.8
2.1^{b, c}
15
11.25
4.5
2.8
2.5^{b, c}
1.6^{b, c}
- 55 to 150
Max.
50
28
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 67942
www.vishay.com
S11-1180-Rev. A, 13-Jun-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000