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| SI4712DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode | |||
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New Product
Si4712DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.013 at VGS = 10 V
0.0165 at VGS = 4.5 V
ID (A)a
14.6
12.9
Qg (Typ.)
8.3 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4712DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠SkyFET® Monolithic TrenchFET® Power
MOSFET and Schottky Diode
⢠100 % Rg Tested
⢠100 % UIS Tested
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
⢠Notebook System Power
- Low Side
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
± 20
TC = 25 °C
14.6
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
11.6
10.3b, c
Pulsed Drain Current
TA = 70 °C
8.2b, c
A
IDM
50
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
4.5
2.3b, c
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
15
11.25
mJ
TC = 25 °C
5
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
3.2
W
2.5b, c
TA = 70 °C
1.6b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ⤠10 s
RthJA
38
Steady State
RthJF
20
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Max.
50
25
Unit
°C/W
Document Number: 65170
S09-1814-Rev. A, 14-Sep-09
www.vishay.com
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