SI4686DY Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si4686DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.0095 at V_GS = 10 V
0.014 at V_GS = 4.5 V
I_D (A)^a
18.2
15
Q_g (Typ.)
9.2 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• Extremely Low Q_gd WFET^® Technology
for Low Switching Losses
• TrenchFET^® Power MOSFETs
• 100 % R_g Tested
APPLICATIONS
D
• High-Side DC/DC Conversion
- Notebook
- Server
G
Top View
Ordering Information: Si4686DY-T1-E3 (Lead (Pb)-free)
Si4686DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
I_AS
L = 0.1 mH
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)
Limit
30
± 20
18.2
14.5
13.8^{b, c}
11^{b, c}
50
4.3
2.5^{b, c}
10
5
5.2
3.3
3.0^{b, c}
1.9^{b, c}
- 55 to 150
S
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
t ≤ 10 s
Steady State
Document Number: 73422
S09-0228-Rev. B, 09-Feb-09
Symbol
R_thJA
R_thJF
Typical
35
20
Maximum
42
24
Unit
°C/W
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