SI4670DY_RC Datasheet, PDF (1/4 Pages) Vishay Siliconix – R-C Thermal Model Parameters

R-C Thermal Model Parameters
Si4670DY_RC
Vishay Siliconix
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient Ch1
Ambient Ch2
Case
RT1
6.9442
6.9442
N/A
RT2
30.0404
30.0404
N/A
RT3
25.8463
25.8463
N/A
RT4
47.1691
46.1691
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient Ch1
Ambient Ch2
Case
CT1
386.3454 u
386.3454 u
N/A
CT2
57.6804 m
57.6804 m
N/A
CT3
6.9241 m
6.9241 m
N/A
CT4
1.1640
1.1640
N/A
Foot Ch1
11.6583
3.6731
8.9996
19.6690
Foot Ch1
2.2210 m
170.7109 u
180.0765 m
11.0677 m
Foot Ch2
11.6583
3.6731
8.9996
19.6690
Foot Ch2
2.2210 m
170.7109 u
180.0765 m
11.0677 m
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 69737
Revision: 02-Oct-07
www.vishay.com
1