SI4484EY-T1-GE3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET
Si4484EY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
100
0.034 at V_GS = 10 V
0.040 at V_GS = 6.0 V
I_D (A)
6.9
6.4
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4484EY-T1-E3 (Lead (Pb)-free)
Si4484EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs
• 175 °C Maximum Junction Temperature
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
100
V
V_GS
± 20
Continuous Drain Current (T_J = 175 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
6.9
4.8
5.4
3.7
A
I_DM
30
Avalanche Current
L = 0.1 mH
I_AR
25
Repetitive Avalanche Energy (Duty Cycle ≤ 1 %)
E_AR
31
mJ
Continuous Source Current (Diode Conduction)^a
I_S
3.1
1.5
A
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
3.8
1.8
2.3
1.1
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
33
70
17
Maximum
40
85
21
Unit
°C/W
Document Number: 71189
S09-1341-Rev. D, 13-Jul-09
www.vishay.com
1