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| SI4436DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET | |||
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New Product
N-Channel 60-V (D-S) MOSFET
Si4436DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60
0.036 at VGS = 10 V
0.043 at VGS = 4.5 V
ID (A)d
8
8
Qg (Typ.)
10.5 nC
SO-8
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠Optimized for âLow Sideâ Synchronous
Rectifier Operation
⢠100 % Rg and UIS Tested
APPLICATIONS
⢠CCFL Inverter
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4436DY-T1-E3 (Lead (Pb)-free)
Si4436DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
60
V
± 20
8a
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
6.8
6.1b, c
4.8b, c
A
25
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
4.2
2.1b, c
15
11.2
mJ
TC = 25 °C
5
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
3.2
2.5b, c
W
TA = 70 °C
1.6b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
t ⤠10 s
Steady State
Symbol
RthJA
RthJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Document Number: 73664
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
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