SI4427DY_05 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
P-Channel 30-V (D-S) MOSFET
Si4427DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0105 @ V_GS = –10 V
–30
0.0125 @ V_GS = –4.5 V
0.0195 @ V_GS = –2.5 V
I_D (A)
–13.3
–12.2
–9.8
FEATURES
D TrenchFETr Power MOSFETs
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4427DY-T1
Si4427DY-T1–E3 (Lead (Pb)-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
–30
V_GS
"12
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
–13.3
–9.4
–10.7
–7.5
–50
–2.5
–1.3
3.0
1.5
1.9
0.9
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71308
S-51452—Rev. B, 01-Aug-05
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
32
68
15
Maximum
42
85
18
Unit
_C/W
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