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SI4427DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET | |||
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New Product
P-Channel 30-V (D-S) MOSFET
Si4427DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0105 @ VGS = â10 V
â30
0.0125 @ VGS = â4.5 V
0.0195 @ VGS = â2.5 V
ID (A)
â13.3
â12.2
â9.8
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
SSS
G
DDDD
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
â30
VGS
"12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
â13.3
â9.4
â10.7
â7.5
â50
â2.5
â1.3
3.0
1.5
1.9
0.9
â55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
Document Number: 71308
S-01828âRev. A, 21-Aug-00
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
32
68
15
Maximum
42
85
18
Unit
_C/W
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