SI4420BDY Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel, 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si4420BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
30
0.0085 at V_GS = 10 V
0.0110 at V_GS = 4.5 V
I_D (A)
13.5
11
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
Pb-free
RoHS
COMPLIANT
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4420BDY-T1-E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
13.5
9.5
10.8
7.5
Pulsed Drain Current
I_DM
50
A
Continuous Source Current (Diode Conduction)^a
I_S
2.3
1.26
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
20
Avalanche Energy
E_AS
20
mJ
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2.5
1.4
1.6
0.9
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t < 10 sec
Steady State
Steady State
Notes:
a. Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol
R_thJA
R_thJF
Typical
40
70
23
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
Document Number: 73067
S-61013-Rev. B, 12-Jun-06
Maximum
50
90
28
Unit
°C/W
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