SI4416DY_RC Datasheet, PDF (1/3 Pages) Vishay Siliconix – R-C Thermal Model Parameters

R-C Thermal Model Parameters
Si4416DY_RC
Vishay Siliconix
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
RT1
6.4825
N/A
RT2
28.7773
N/A
RT3
27.8777
N/A
RT4
26.9568
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
CT1
7.1415 m
N/A
CT2
54.8961 m
N/A
CT3
3.4923
N/A
CT4
2.1934
N/A
Foot
1.1102
4.7416
7.6570
6.4989
Foot
1.4261 m
95.7173 m
189.0677 m
6.3227 m
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 74090
Revision 31-Aug-05
www.vishay.com
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