SI4413ADY_RC Datasheet, PDF (1/3 Pages) Vishay Siliconix – R-C Thermal Model Parameters

Si4413ADY_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
RT1
6.1480
N/A
RT2
24.4080
N/A
RT3
26.0454
N/A
RT4
27.2274
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
CT1
22.0422 m
N/A
CT2
56.2436 m
N/A
CT3
3.5677
N/A
CT4
2.3495
N/A
Foot
1.1236
4.4461
9.9726
5.3859
Foot
9.0587 m
129.7015 m
138.7031 m
11.4484 m
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 74307
Revision: 07-May-07
www.vishay.com
1