SI4410DY Datasheet, PDF (1/4 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

N-Channel 30-V (D-S) MOSFET
Si4410DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0135 @ V_GS = 10 V
30
0.020 @ V_GS = 4.5 V
I_D (A)
10
8
FEATURES
D TrenchFETr Power MOSFET
D
SO-8
S1
8D
S2
7D
G
S3
6D
G4
5D
Top View
Ordering Information: Si4410DY-REVA
Si4410DY-T1-REVA (with Tape and Reel)
Si4410DY-REVA-E3 (Lead free)
Si4410DY-T1-A-E3 (Lead free with Tape and Reel)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
10
8
50
2.3
2.5
1.6
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 71726
S-40838—Rev. L, 03-May-04
Symbol
R_thJA
R_thJF
Limit
50
22
Unit
_C/W
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