SI4410BDY Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si4410BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.0135 @ V_GS = 10 V
0.020 @ V_GS = 4.5 V
I_D (A)
10
8
FEATURES
D TrenchFETr Power MOSFET
D 100% R_g Tested
APPLICATIONS
D Battery Switch
D Load Switch
D
SO-8
S1
S2
S3
G4
Top View
8D
7D
6D
5D
G
S
N-Channel MOSFET
Ordering Information:
Si4410BDY
Si4410BDY—T1 (with Tape and Reel)
Si4410BDY—E3 (Lead (Pb)-Free)
Si4410BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
Pb-free
Available
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
10
7.5
8
6
50
2.3
1.26
2.5
1.4
1.6
0.9
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72211
S-50366—Rev. C, 28-Feb-05
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
40
70
25
Maximum
50
90
30
Unit
_C/W
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