SI4408DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
N-Channel 20-V (D-S) MOSFET
Si4408DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (W)
0.0045 @ V_GS = 10 V
0.0068 @ V_GS = 4.5 V
I_D (A)
21
17
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized for Fast Switching
D Low Switching Losses
D Low Gate Drive Losses
D 100% R_G Tested
APPLICATIONS
D Self-Driven Synchronous Rectification
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"20
21
14
17
11
60
2.9
1.3
3.5
1.6
2.2
1
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 70687
S-03662—Rev. B, 14-Apr-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
29
67
13
Maximum
35
80
16
Unit
_C/W
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