SI4406DY-T1-E3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si4406DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0045 at V_GS = 10 V
30
0.0055 at V_GS = 4.5 V
I_D (A)
20
17
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4406DY-T1-E3 (Lead (Pb)-free)
Si4406DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• Optimized for “Low Side” Synchronous
Rectifier Operation
• 100 % R_g Tested
APPLICATIONS
• DC/DC Converters
• Synchronous Rectifiers
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
20
13
15
10
A
Pulsed Drain Current (10 µs Pulse Width)
I_DM
60
Continuous Source Current (Diode Conduction)^a
I_S
2.9
1.3
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
3.5
1.6
2.2
1
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
29
67
13
Maximum
35
80
16
Unit
°C/W
Document Number: 71824
S09-0221-Rev. E, 09-Feb-09
www.vishay.com
1