SI4405DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si4405DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
- 30
0.0075 @ V_GS = - 10 V
I_D (A)
- 17
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4405DY
Si4405DY-T1 (with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFETS
D 100% R_g Tested
APPLICATIONS
D Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V_GS
"20
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
- 17
- 11
- 13
-9
- 60
- 2.9
- 1.30
3.5
1.6
2.1
1.0
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71913
S-31726—Rev. D, 18-Aug-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
29
67
13
Maximum
35
80
16
Unit
_C/W
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