SI4403DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

New Product
P-Channel 1.8-V (G-S) MOSFET
Si4403DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.017 @ V_GS = –4.5 V
–20
0.023 @ V_GS = –2.5 V
0.032 @ V_GS = –1.8 V
I_D (A)
–9
–7
–6
FEATURES
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch
– Game Stations
– Notebooks
– Desktops
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–20
"8
–9
–6.5
–7
–5.0
–30
–2.1
–1.3
2.5
1.35
1.6
0.87
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71683
S-04393—Rev. A, 13-Aug-01
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
38
71
19
Maximum
50
92
25
Unit
_C/W
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