SI4403BD_13 Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

P-Channel 1.8-V (G-S) MOSFET
Si4403BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.017 at V_GS = - 4.5 V
- 20
0.023 at V_GS = - 2.5 V
0.032 at V_GS = - 1.8 V
I_D (A)
- 9.9
- 8.5
- 7.2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4403BDY-T1-E3 (Lead (Pb)-free)
Si4403BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
I_DM
- 9.9
- 7.3
- 7.9
- 5.8
- 30
A
Continuous Source Current (Diode Conduction)^a
I_S
- 2.3
- 1.3
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2.5
1.35
1.6
0.87
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
43
71
19
Maximum
50
92
25
Unit
°C/W
Document Number: 72268
S09-0705-Rev. C, 27-Apr-09
www.vishay.com
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