SI4403BDY Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

New Product
P-Channel 1.8-V (G-S) MOSFET
Si4403BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.017 @ V_GS = - 4.5 V
- 20
0.023 @ V_GS = - 2.5 V
0.032 @ V_GS = - 1.8 V
I_D (A)
- 9.9
- 8.5
- 7.2
FEATURES
D TrenchFETr Power MOSFETS
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4403BDY
Si4403BDY-T1 (with Tape and Reel)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
- 20
"8
- 9.9
- 7.3
- 7.9
- 5.8
- 30
- 2.3
- 1.3
2.5
1.35
1.6
0.87
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72268
S-31412—Rev. A, 07-Jul-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
43
71
19
Maximum
50
92
25
Unit
_C/W
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