SI4398DY Datasheet, PDF (1/6 Pages) Vishay Siliconix – Ultra-Low On-Resistance

Si4398DY
Vishay Siliconix
N-Channel Reduced Q_g, Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω)
0.0028 at V_GS = 10 V
0.0040 at V_GS = 4.5 V
I_D (A)
25
22
S1
S2
S3
G4
SO-8
Top View
8^D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Q_gd for Switching Losses
• Ultra-Low On-Resistance
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Rectifier in Low Power DC/DC Converters
• POL
• OR-ing
D
G
Ordering Information: Si4398DY-T1-E3 (Lead (Pb)-free)
Si4398DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)^a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25 °C
T_A = 70 °C
L = 0.1 mH
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
20
± 20
25
19
20
13
70
2.9
1.3
40
80
3.5
1.6
2.2
1.0
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1” x 1” FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
29
67
13
Maximum
35
80
16
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 73018
S11-0209-Rev. C, 14-Feb-11
www.vishay.com
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