SI4396DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4396DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
30
0.0115 at V_GS = 10 V
0.016 at V_GS = 4.5 V
I_D (A)^a
16
12.7
Q_g (Typ)
13.3 nC
SCHOTTKY AND BODY DIODE PRODUCT
SUMMARY
V_DS (V)
30
V_SD (V)
Diode Forward Voltage
0.4 at 2 A
I_S (A)
5^a
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information : Si4396DY-T1-E3 (Lead (Pb)-free)
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• Notebook Logic DC/DC
- Low Side
RoHS
COMPLIANT
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
16
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
12.7
12.3^{b, c}
Pulsed Drain Current
T_A = 70 °C
9.7^{b, c}
A
I_DM
40
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
5
2.8^{b, c}
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
20
20
mJ
T_C = 25 °C
5.4
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.4
W
3.1^{b, c}
T_A = 70 °C
2.0^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
Symbol
Typ
t ≤ 10 sec
R_thJA
34
Steady State
R_thJF
17
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 74252
S-61223-Rev. A, 17-Jul-06
Max
Unit
40
°C/W
23
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