SI4394DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel Reduced Qdg, Fast Switching WFET

New Product
Si4394DY
Vishay Siliconix
N-Channel Reduced Q_dg, Fast Switching WFETt
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.00825 @ V_GS = 10 V
0.00975 @ V_GS = 4.5 V
I_D (A)
15
14
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4394DY—E3 (Lead Free)
Si4394DY-T1—E3 (Lead Free with Tape and Reel)
FEATURES
D Extremely Low Q_gd WFETt Technology for
Switching Losses
D TrenchFETr Power MOSFET
D 100% R_g Tested
APPLICATIONS
D High-Side DC/DC Conversion
− Notebook
− Server
D Synchronous Rectification
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Avalanch Current
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L= 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
i_AS
P_D
T_J, T_stg
30
"12
15
10
12
8
50
2.7
1.3
45
2.7
1.4
1.9
0.9
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72713
S-40442—Rev. A, 15-Mar-04
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
32
68
16
Maximum
42
90
20
Unit
_C/W
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