SI4392DY_06 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching WFET®

Si4392DY
Vishay Siliconix
N-Channel Reduced Q_g, Fast Switching WFET^®
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
30
0.00975 at V_GS = 10 V
0.01375 at V_GS = 4.5 V
I_D (A)
12.5
10.0
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4392DY-T1
Si4392DY-T1-E3 (Lead (Pb)-free)
FEATURES
• Extremely Low Q_gd WFET Technology for
Switching Losses
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Server
Available
RoHS*
COMPLIANT
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted^a
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
12.5
10
Pulsed Drain Current
I_DM
50
A
Continuous Source Current (Diode Conduction)^a
I_S
2.7
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
30
E_AS
45
mJ
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
3.0
1.9
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS^a
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board, t ≤ 10 sec.
Symbol
R_thJA
R_thJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72151
S-61013-Rev. E, 12-Jun-06
Typical
33
16
Maximum
42
20
Unit
°C/W
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