SI4390DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel Qg, Fast Switching WFET

New Product
Si4390DY
Vishay Siliconix
N-Channel Q_g, Fast Switching WFETt
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.0095 @ V_GS = 10 V
0.0135 @ V_GS = 4.5 V
I_D (A)
12.5
10.5
FEATURES
D Extremely Low Q_gd WFET Technology for
Switching Losses
D TrenchFETr Power MOSFET
APPLICATIONS
D High-Side DC/DC Conversion
- Notebook
- Server
D
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4390DY
Si4390DY-T1 (with Tape and Reel)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
12.5
8.5
10
6.8
20
2.7
1.3
3.0
1.4
1.9
0.9
-55 to 150
Unit
V
A
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72150
S-03920—Rev. B, 19-May-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
32
68
15
Maximum
42
90
20
Unit
_C/W
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