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SI4388DY Datasheet, PDF (1/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si4388DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
30
RDS(on) (Ω)
0.016 at VGS = 10 V
0.024 at VGS = 4.5 V
0.015 at VGS = 10 V
0.017 at VGS = 4.5 V
ID (A)a
10.7
8.6
11.3
10.6
Qg (Typ.)
8
19
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.43 V at 2.0 A
IF (A)
2.0
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• CCFL Inverter
• Notebook Logic DC/DC
D1
D1 1
D1 2
G2 3
S2 4
SO-8
8 G1
7 S1/D2
6 S1/D2
5 S1/D2
Top View
Ordering Information: Si4388DY-T1-E3 (Lead (Pb)-free)
Si4388DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
ISM
IAS
EAS
PD
TJ, Tstg
30
30
± 20
± 12
10.7
11.3
8.5
-9
8.1b, c
6.4b, c
40
8.6b, c
6.9b, c
40
3.0
3.2
1.7b, c
40
1.8b, c
40
15
20
11.2
20
3.3
3.5
2.1
2.2
1.9b, c
1.2b, c
2.2b, c
1.3b, c
- 55 to 150
S1/D2
Schottky Diode
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Typ. Max.
Maximum Junction-to-Ambientb, d
t ≤ 10 s
RthJA
54
65
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
32
38
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 112 °C/W (Channel-1) and 107 °C/W (Channel-2).
Channel-2
Typ. Max.
47
60
30
35
Unit
°C/W
Document Number: 74344
S09-0392-Rev. B, 09-Mar-09
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