SI4386DY Datasheet, PDF (1/8 Pages) Vishay Siliconix – Halogen-free According to IEC 61249-2-21 Available

Si4386DY
Vishay Siliconix
N-Channel Reduced Q_g, Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.007 at V_GS = 10 V
30
0.0095 at V_GS = 4.5 V
I_D (A)
16
13.5
Q_g (Typ.)
11
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4386DY-T1-E3 (Lead (Pb)-free)
Si4386DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Gen II Power MOSFETs
• PWM Optimized
• 100 % R_g Tested
APPLICATIONS
• DC/DC Conversion for PC
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
16
13
11
9
Pulsed Drain Current
I_DM
± 50
A
Continuous Source Current (Diode Conduction)^a
I_S
2.8
1.3
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
E_AS
20
20
mJ
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
3.1
1.47
2
0.95
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
34
71
18
Maximum
40
85
22
Unit
°C/W
Document Number: 73109
S09-0226-Rev. D, 09-Feb-09
www.vishay.com
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