SI4378DY_RC Datasheet, PDF (1/3 Pages) Vishay Siliconix – R-C Thermal Model Parameters

R-C Thermal Model Parameters
Si4378DY_RC
Vishay Siliconix
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
RT1
2.1646
N/A
RT2
22.7237
N/A
RT3
31.7971
N/A
RT4
23.2083
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
CT1
20.8422 m
N/A
CT2
47.2729 m
N/A
CT3
2.0384
N/A
CT4
3.7242
N/A
Foot
253.8192 m
4.1485
6.6629
4.9847
Foot
18.9670
155.1850 m
257.9792 m
13.8749 m
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 73820
Revision 02-Mar-06
www.vishay.com
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