SI4368DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching WFET

New Product
Si4368DY
Vishay Siliconix
N-Channel Reduced Q_g, Fast Switching WFETt
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.0032 @ V_GS = 10 V
0.0036 @ V_GS = 4.5 V
I_D (A)
25
22
FEATURES
D Extremely Low Q_gd WFET Technology for
Switching Losses Improvement
D TrenchFETr Gen II Power MOSFET
D 100% R_g Tested
APPLICATIONS
D Low-Side DC/DC Conversion
− Notebook, Server, VRM Module
D Fixed Telecom
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4368DY—E3
Si4368DY-T1—E3 (Lead Free with Tape and Reel)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Avalanch Current
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L= 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
i_AS
P_D
T_J, T_stg
30
"12
25
17
20
13
70
2.9
1.3
50
3.5
1.6
2.2
1
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72704
S-40105—Rev. A, 02-Feb-04
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
29
67
13
Maximum
35
80
16
Unit
_C/W
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