SI4354DY Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si4354DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.0165 at V_GS = 10 V
0.0185 at V_GS = 4.5 V
I_D (A)
9.5
9.0
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4354DY-T1-E3 (Lead (Pb)-free)
Si4354DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Gen II Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Server
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^b
T_A = 25 °C
T_A = 70 °C
I_D
9.5
7.5
A
Pulsed Drain Current
I_DM
40
Continuous Source Current (Diode Conduction)^b
I_S
2.2
Maximum Power Dissipation^b
T_A = 25 °C
T_A = 70 °C
P_D
2.5
1.6
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS^a
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Foot (Drain)
Notes:
a. t ≤ 10 s.
b. Surface Mounted on 1" x 1" FR4 board.
Symbol
R_thJA
R_thJF
Typical
43
19
Maximum
50
25
Unit
°C/W
Document Number: 72967
S09-0392-Rev. C, 09-Mar-09
www.vishay.com
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