SI4346DY Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si4346DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.023 @ V_GS = 10 V
0.025 @ V_GS = 4.5 V
0.030 @ V_GS = 3.0 V
0.036 @ V_GS = 2.5 V
I_D (A)
8
7.5
6.8
6.0
Q_g (Typ)
6.5
FEATURES
D TrenchFETr Gen II Power MOSFET
D 100% R_g Tested
APPLICATIONS
D High-Side DC/DC Conversion
− Notebook
− Desktop
− Server
D Notebook Logic DC/DC, Low-Side
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4346DY—E3
Si4346DY-T1—E3 ( with Tape and Reel)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"12
8
5.9
6.5
4.7
30
2.2
1.20
2.5
1.31
1.6
0.84
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72958
S-41793—Rev. B, 04-Oct-04
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
43
74
22
Maximum
50
95
27
Unit
_C/W
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