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SI4340CDY Datasheet, PDF (1/12 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
New Product
Si4340CDY
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Channel-1 20 0.0094 at VGS = 10 V
0.0125 at VGS = 4.5 V
Channel-2 20
0.008 at VGS = 10 V
0.0095 at VGS = 4.5 V
ID (A)a
14.1
12.2
20
18.9
Qg (Typ.)
9.6
14.1
SCHOTTKY PRODUCT SUMMARY
VDS (V)
20
VSD (V) Diode Forward Voltage
0.55 V at 2.5 A
IF (A)
2
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• DC/DC Converters
- Game Stations
- Notebook PC Logic
RoHS
COMPLIANT
D1 1
D1 2
G1 3
G2 4
S2 5
S2 6
S2 7
SO-14
14 S1
13 S1
12 D2
11 D2
10 D2
9 D2
8 D2
Top View
Ordering Information: Si4340CDY-T1-E3 (Lead (Pb)-free)
D1
D2
G1
G2
S1
N-Channel 1
MOSFET
Schottky Diode
S2
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
20
20
V
VGS
± 20
± 16
TC = 25 °C
14.1
20
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 70 °C
TA = 25 °C
ID
11.2
11.5b, c
16.5
15.2b, c
TA = 70 °C
9.2b, c
12.2b, c
A
IDM
40
50
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
IS
2.5
1.7b, c
4.5
2.5b, c
IAS
5
L = 0.1 mH
EAS
1.25
mJ
TC = 25 °C
3
5.4
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
1.9
2b, c
3.5
W
3b, c
TA = 70 °C
1.3b, c
1.9b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Symbol
Typ.
Maximum Junction-to-Ambientb, d
t ≤ 10 s
RthJA
53
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
35
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions for channel 1 is 110 °C/W and channel 2 is 87 °C/W.
Max.
62.5
42
Document Number: 68398
S-81547-Rev. B, 07-Jul-08
Channel-2
Typ. Max.
35
42
18
23
Unit
°C/W
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