SI4310BDY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4310BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
Channel-1
Channel-2
V_DS (V)
30
r_DS(on) (W)
0.011 @ V_GS = 10 V
0.016 @ V_GS = 4.5 V
0.0085 @ V_GS = 10 V
0.0095 @ V_GS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
30
V_SD (V)
Diode Forward Voltage
0.53 V @ 3 A
I_D (A)
10
8.2
14
13
I_F (A)
2.0
FEATURES
D TrenchFETr Power MOSFET
D 100% R_g Tested
APPLICATIONS
D DC/DC Converters
− Game Stations
− Video Equipment
SO-14
D₁
D_{1 1}
14 ^S1
D_{1 2}
13 ^S1
G_{1 3}
12 ^D2
G_{2 4}
11 ^D2
G₁
G₂
S_{2 5}
S_{2 6}
S_{2 7}
Top View
10 ^D2
9 ^D2
8 ^D2
Ordering Information:
Si4310BDY—E3
Si4310BDY-T1—E3 (with Tape and Reel)
S₁
N-Channel 1
MOSFET
D₂
Schottky Diode
S₂
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol ^{10 secs Steady State 10 secs Steady State}
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
T_A = 25_C
T_A = 70_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
"20
10
7.5
14
9.8
8
6
11
7.8
40
50
1.8
1.04
2.73
1.33
2
1.14
3.0
1.47
1.28
0.73
1.9
0.94
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady-State
Steady-State
Symbol
R_thJA
R_thJF
Document Number: 73064
S-41530—Rev. A, 16-Aug-04
Channel-1
Typ Max
53
62.5
92
110
35
42
Channel-2
Typ Max
34
35
70
72
17
24
Schottky
Typ Max
40
48
76
93
21
26
Unit
_C/W
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