SI4300DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode

Si4300DY
Vishay Siliconix
N-Channel 30-V (D-S), Reduced Qg
Fast Switching MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.0185 @ V_GS = 10 V
0.033 @ V_GS = 4.5 V
I_D (A)
9
7
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
V_SD (v)
Diode Forward Voltage
30
0.5 V @ 1 A
I_F (A)
2.0
SO-8
S/A ₁
8 ^D/K
S/A ₂
7 ^D/K
S/A ₃
6 ^D/K
G4
5 ^D/K
G
FEATURES
D TrenchFETr Power MOSFET
D LITTLE FOOT Plust Integrated Schottky
D PWM Optimized
APPLICATIONS
D Low Power Sychronous Rectification
DK
Schottky Diode
Top View
Ordering Information: Si4300DY
Si4300DY-T1 (with Tape and Reel)
N-Channel MOSFET
S
A
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)
(MOSFET)^a
Pulsed Drain Current (MOSFET)
T_A = 25_C
T_A = 70_C
Continuous Source Current (MOSFET Diode Conduction)^a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)^a
T_A = 25_C
T_A = 70_C
Maximum Power Dissipation (Schottky)^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_DA
V_GS
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
30
30
"20
9
6.4
7
5.1
40
2.3
1.25
2.3
1.25
20
2.5
1.38
1.6
0.88
2.2
1.25
1.4
0.80
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71772
S-03951—Rev. B, 26-May-03
t v 10 sec
Steady-State
Steady-State
Symbol
R_thJA
R_thJF
MOSFET
Typ
Max
40
50
70
90
18
23
Schottky
Typ
Max
45
55
78
100
25
30
Unit
_C/W
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